NTBG028N170M1 mosfet equivalent, sic mosfet.
* Typ. RDS(on) = 28 mW
* Ultra Low Gate Charge (typ. QG(tot) = 222 nC)
* Low Effective Output Capacitance (typ. Coss = 200 pF)
* 100% Avalanche Tested
* UPS
* DC−DC Converter
* Boost Converter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Sy.
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